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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SMINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN2418,LF is a single PNP pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors R1 (47 kOhms) and R2 (10 kOhms) within an S-Mini (TO-236-3/SC-59/SOT-23-3) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 200 MHz. The device features a minimum DC current gain of 50 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current. Maximum power dissipation is rated at 200 mW.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Utilizes the PCT process for silicon NPN/PNP epitaxial type construction.
- Designed for compact equipment manufacturing through reduced assembly costs.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm RoHS3 compliance status and moisture sensitivity level requirements prior to integration into production workflows. Cross-reference the DigiKey part numbers with the original Toshiba Semiconductor and Storage product identifiers to validate authenticity and traceability.
Selection Notes
Select this component when a single PNP transistor with integrated biasing is required for space-constrained designs. Ensure the 47 kOhm base resistor value aligns with the target drive current requirements. Verify that the 50 V breakdown voltage and 100 mA current limits exceed the maximum operational stresses of the application circuit.
Part Context
This component belongs to the RN series of bias resistor built-in transistors from Toshiba Semiconductor and Storage. It serves as the complementary PNP counterpart to the RN1418 NPN variant. The series is engineered to replace discrete transistor and resistor combinations in standard logic and interface applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's datasheet for direct pin-compatible alternatives or functional equivalents within the same product family.
