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The RN2421(TE85L,F) is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with an internal base resistor, housed in a compact SMD package such as TO-236-3 or SC-59. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 0.8A. Designed for high-frequency applications, it offers a transition frequency of 200MHz. The component is RoHS compliant and lead-free, suitable for surface mount assembly in space-constrained electronic circuits.
Verify the specific package variant (TO-236-3, SC-59, or SOT-23-3) against schematic requirements. Confirm that the internal resistor configuration matches the target circuit design. Ensure compliance with RoHS standards if required by project specifications. Check manufacturer datasheets for thermal characteristics and absolute maximum ratings prior to integration.
Select this component when a compact PNP solution with integrated biasing is required. Consider the 50V voltage rating and 0.8A current capacity for load compatibility. Evaluate the 200MHz frequency response against signal speed requirements. Compare physical dimensions of available packages to ensure fit within the designated footprint.
This part belongs to Toshiba's pre-biased transistor series, which combines discrete transistors with resistors to reduce external component count. These devices are commonly used in digital logic interfaces and power management circuits where space efficiency and simplified biasing networks are prioritized over discrete component flexibility.
Cross-reference with other PNP pre-biased transistors offering similar 50V ratings and 0.8A current capabilities. Verify pinout compatibility and internal resistor values before substitution. Ensure equivalent frequency performance and package dimensions for direct replacement scenarios.