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The RN2422TE85LF is a pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN silicon epitaxial planar transistor with bias resistors in an S-Mini package. The device features a collector-emitter voltage of 50V, a collector current of 800mA, and a transition frequency of 200MHz. Power dissipation is rated at 200mW. Internal resistors are typically 4.7kΩ base and 4.7kΩ emitter. It complies with AEC-Q101 standards for automotive applications.
Verify the exact part number suffix against official Toshiba documentation to confirm package type and electrical specifications. Confirm RoHS compliance status and check for any specific automotive grade certifications required for the target application. Ensure the supplier provides valid traceability documents matching the manufacturer's batch codes.
Select this component when a compact solution combining a PNP switch with integrated biasing is required. The 200MHz transition frequency supports high-speed switching needs. Consider the 50V rating and 800mA current capacity relative to load requirements. The AEC-Q101 qualification makes it suitable for environments requiring automotive reliability standards.
This component belongs to Toshiba's line of pre-biased transistors designed to reduce external component count. The TE85L suffix indicates the specific S-Mini surface-mount packaging configuration. These devices replace discrete resistor networks, saving board space and assembly time in digital logic and power management interfaces.
Public confirmed substitute part numbers include RN2423(TE85L,F). Verify pinout compatibility and electrical parameter margins before substitution.