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The RN2423(TE85L,F) is a pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal base resistors R1 and R2 to simplify circuit design. The device features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current rating of 0.8A. It operates with a power dissipation capacity of 200mW and supports a maximum frequency of 200MHz. The component is housed in the S-Mini surface-mount package, suitable for compact electronic applications.
Verify the specific ordering suffix TE85L against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the requested quantity aligns with standard reel or cut-tape availability requirements defined in the datasheet. Cross-reference the RoHS compliance status with current environmental regulations applicable to your region before finalizing procurement orders.
Select this component when a PNP pre-biased transistor with 50V voltage tolerance and 0.8A current capability is required. Ensure the application logic levels match the integrated resistor values provided in the electrical characteristics table. Verify that the thermal constraints of the S-Mini package can accommodate the expected power dissipation under continuous operation conditions.
This part belongs to Toshiba's series of pre-biased transistors designed to replace discrete resistor-transistor combinations. These devices are engineered to minimize board space and assembly costs while maintaining reliable switching performance. The RN2423 variant specifically addresses applications requiring PNP logic inversion with built-in biasing networks.
Consult the official Toshiba replacement guide for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with other manufacturers' pre-biased PNP transistors.