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The RN2424(TE85L,F) is a pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN biasing transistor with the main PNP device in an S-Mini package. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of 0.8 A, and a maximum operating frequency of 200 MHz. The component features a power dissipation rating of 200 mW and complies with RoHS standards for lead-free construction.
Verify the specific ordering code suffix against the manufacturer's latest documentation to ensure correct package type and tape/reel specifications. Confirm RoHS compliance status directly with the supplier. Request official datasheets and quality certificates prior to finalizing procurement orders to guarantee authenticity and traceability.
Select this component when a high-current PNP switch with integrated biasing is required in a minimal footprint. Ensure the application voltage does not exceed the -50 V collector-emitter limit. Verify that the thermal requirements align with the 200 mW power dissipation rating under expected operating conditions.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with internal resistors. The TE85L designation indicates the specific S-Mini surface-mount package configuration. This series is engineered to replace multiple discrete components, thereby saving board space and simplifying soldering operations.
Consult official cross-reference lists for direct substitutes. Potential equivalents may include other pre-biased PNP transistors with matching 50V/0.8A ratings and compatible S-Mini footprints from alternative manufacturers.