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The RN2426(TE85L,F) is a pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates internal bias resistors within an S-Mini surface-mount package to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current rating of 800 mA, and a transition frequency of 200 MHz. The device features a power dissipation capacity of 200 mW and operates within a temperature range of -55°C to +150°C. It is RoHS compliant and lead-free.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific tape-and-reel packaging details prior to ordering. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to maintain reliability during assembly processes.
Select this component when high current switching (up to 800 mA) is required in a compact form factor. The integrated bias network reduces external component count compared to discrete resistor-transistor combinations. Verify that the PNP configuration aligns with the system logic requirements and that the 50 V voltage rating exceeds the maximum operating load voltage.
This part belongs to Toshiba's RN series of pre-biased transistors, designed to replace discrete resistor-transistor networks. The TE85L suffix indicates the specific S-Mini package variant. These devices are commonly used in consumer electronics and industrial control systems where board space optimization and consistent biasing characteristics are critical for performance stability.
Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinout compatibility and electrical parameters such as VCEO, IC, and hFE before implementing alternative components from other manufacturers.