RN2427TE85LF

$0.38

Description：TRANS PREBIAS PNP 50V 0.8A SMINI
Series：-

SKU:066cd1fe428e Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.8A SMINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：2.2 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 50mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：200 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini

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RN2427TE85LF

Overview

RN2427TE85LF is a single pre-biased PNP transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 0.8A. The device operates with a transition frequency of 200MHz and dissipates up to 200mW of power. Packaged in the S-Mini (TO-236-3) surface-mount format, it integrates internal biasing resistors for simplified circuit design.

Feature Summary

Integrates internal biasing network to reduce external component count
Designed for high-speed switching applications with 200MHz transition frequency
Supports high collector current capability of 0.8A
Utilizes compact S-Mini surface-mount packaging

Applications

High-frequency switching circuits
Driver stages for power transistors
Logic interface buffers
General-purpose amplification

Procurement Notes

Verify the specific suffix TE85L against the official Toshiba datasheet to confirm tape and reel specifications. Ensure the ordering part number matches the exact electrical characteristics required for the target application. Cross-reference the manufacturer product number RN2427TE85LF with authorized distributors to confirm availability and authenticity before finalizing procurement.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. The 50V rating and 0.8A current capacity suit moderate-power switching tasks. Consider the S-Mini package dimensions for PCB layout constraints. Verify thermal management requirements given the 200mW power dissipation limit in the specified package.

Part Context

The RN2427 series belongs to Toshiba's lineup of pre-biased transistors, which combine BJT devices with built-in resistor networks. This integration simplifies board space and assembly time compared to discrete resistor-transistor combinations. The TE85L variant specifically denotes the S-Mini packaging style used for compact surface-mount applications.