RF Diode RN262GT2R product image

RN262GT2R

  • Description:RF DIODE PIN 30V 100MW VMD2
  • Series:-

SKU:aa5825342a6a Category: Brand:

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RN262GT2R is listed in the RF Diode range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is RF DIODE PIN 30V 100MW VMD2. Review the specifications below when checking this part for your BOM.

RF Diode specifications for RN262GT2R

  • Description:RF DIODE PIN 30V 100MW VMD2
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.4pF @ 1V, 1MHz
  • Resistance @ If, F:1.5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):100 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SOD-723
  • Supplier Device Package:VMD2
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for RN262GT2R

RN262GT2R

RF Diode Overview

The RN262GT2R is a silicon PIN diode manufactured by ROHM Semiconductor, designed for high-frequency switching applications. It features a single configuration with two terminals housed in an SOD-723 (VMD2) surface-mount package. Key electrical parameters include a maximum reverse voltage of 30 V and a forward current rating of 100 mA. The device exhibits a low junction capacitance of 0.4 pF at 1 V reverse bias and 1 MHz frequency. Forward resistance is specified at 2.8 Ω when measured at 3 mA forward current and 100 MHz. The component supports a maximum operating junction temperature of 150 °C and complies with RoHS standards.

RF Diode Feature Summary

  • Ultra-small mold type construction suitable for compact surface-mount designs
  • Low high-frequency forward resistance and low junction capacitance for efficient RF switching

RF Diode Applications

  • High frequency switching circuits
  • RF signal routing and attenuation control
  • Microwave switch implementations

RF Diode Procurement Notes

Verify the specific ordering suffix GT2R against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

RF Diode Selection Notes

Select this component based on its 30 V reverse voltage rating and 0.4 pF capacitance characteristics for RF applications. Ensure the SOD-723 package dimensions align with the PCB land pattern requirements. Verify that the 100 mA forward current capability meets the circuit's operational demands under expected thermal conditions.

RF Diode Part Context

The RN262GT2R belongs to the RN262 series of silicon PIN diodes from ROHM Semiconductor. This series is engineered for high-speed switching performance in radio frequency environments. The GT2R suffix typically denotes the tape and reel packaging format used for automated surface-mount assembly processes.

RF Diode Replacement Considerations

The RN142SM is documented as a similar specification replacement option. Note that the RN142SM utilizes an EMD2 (SOD-523) package, which differs physically from the VMD2 (SOD-723) package of the RN262GT2R. Verify mechanical fit and electrical parameter compatibility, particularly the 60 V reverse voltage rating of the substitute.

RN262GT2RRN262GT2R

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