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RQ3E110AJTB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 11A/24A 8HSMT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RQ3E110AJTB
- Description：MOSFET N-CH 30V 11A/24A 8HSMT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 11A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-HSMT (3.2x3)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for RQ3E110AJTB
Single FETs, MOSFETs Overview
The RQ3E110AJTB is a single N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 30V drain-source voltage rating and supports continuous drain currents of 11A at ambient temperature and 24A at case temperature. The device exhibits a maximum on-resistance of 16.5mΩ and operates with a gate-source voltage threshold of 2.5V. Packaged in an 8-HSMT surface-mount footprint measuring 3.2x3mm, it offers a gate charge of 13.5nC and a fall time of 20ns. The component is designed for high-efficiency switching applications within the specified thermal limits.
Single FETs, MOSFETs Feature Summary
- High current handling capability with 24A case temperature rating
- Low on-resistance for efficient power switching
- Compact 8-HSMT surface-mount package design
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix AJTB against official ROHM documentation to confirm pinout and electrical tolerances. Ensure the HSMT-8 package dimensions match the target PCB layout constraints. Cross-reference the datasheet for thermal resistance values to validate heat dissipation requirements for the intended operating environment.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current N-channel solution is required in a compact form factor. The 30V rating suits 5V or 12V systems. Evaluate the 16.5mΩ on-resistance against conduction loss targets. Confirm that the 2.5V gate threshold aligns with the available logic drive levels in the system architecture.
Single FETs, MOSFETs Part Context
This part belongs to the ROHM RQ3E series of single N-channel MOSFETs. The series utilizes silicon technology optimized for low on-resistance and fast switching speeds. The HSMT-8 package provides a balance between thermal performance and space efficiency for modern electronic designs requiring reliable power switching components.
Single FETs, MOSFETs Replacement Considerations
Check ROHM's official substitution guide for direct equivalents. Verify that any alternative maintains the 30V Vds rating and comparable Rds(on) characteristics. Ensure the replacement package matches the 8-HSMT footprint to avoid PCB redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
