RS1G150MNTB

$0.81

Description：MOSFET N-CH 40V 15A 8HSOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:327ca24fb638 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RS1G150MNTB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 40V 15A 8HSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RS1G150MNTB

Description：MOSFET N-CH 40V 15A 8HSOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：930 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 25W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-HSOP
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for RS1G150MNTB

RS1G150MNTB

Single FETs, MOSFETs Overview

The RS1G150MNTB is a single N-channel power MOSFET manufactured by ROHM Semiconductor in an HSOP8 surface-mount package. It features a drain-source voltage (VDSS) of 40V and a continuous drain current (ID) of ±43A at 25°C case temperature. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 10.6mΩ at VGS=10V and 13.3mΩ at VGS=4.5V. Power dissipation is rated at 25W, with a junction-to-case thermal resistance of 5.0°C/W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient switching performance
High power density in a compact HSOP8 mold package
Manufactured using lead-free plating compliant with RoHS standards
Halogen-free construction

Single FETs, MOSFETs Applications

Switching circuits
Power supply modules

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the HSOP8 package dimensions and pinout match the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V N-channel MOSFET with high current capability is required in a small surface-mount form factor. Evaluate the RDS(on) values at the intended gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance characteristics for heat dissipation planning in the final assembly.

Single FETs, MOSFETs Part Context

This part belongs to the RS1G series of N-channel power MOSFETs from ROHM Semiconductor. The 'TB' suffix indicates the tape-and-reel packaging configuration with a basic ordering unit of 2500 pieces. The base model RS1G150MN utilizes the HSOP8 package code.