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RSH125N03TB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 12.5A 8SOP. Review the specifications below when checking this part for your BOM.
The RSH125N03TB1 is a silicon N-channel MOSFET designed for low on-resistance and fast switching applications. It features a built-in gate-source protection diode to guard against static electricity. The device is housed in a compact SOP-8 surface mount package, suitable for power switching and DC/DC converter circuits. Key electrical parameters include a drain-source voltage of 30V, a continuous drain current of 12.5A, and a total power dissipation of 2W at 25°C ambient temperature.
Verify the specific suffix TB1 corresponds to the taping packaging format with a basic ordering unit of 2500 pieces. Confirm RoHS compliance status through official documentation before procurement. Ensure the component meets general-use electronic equipment requirements as specified by the manufacturer.
Select this component for applications requiring a 30V N-channel MOSFET with integrated ESD protection. Consider the 12.5A continuous drain current capability and the thermal resistance of 62.5°C/W when designing heat dissipation strategies. Verify that the SOP-8 package dimensions fit the target PCB layout constraints.
This part belongs to ROHM's 4V Drive Nch MOSFET series, utilizing micro-processing technology to achieve low on-resistance. The product line targets various applications with compact, high-power, and composite options, though this specific model is intended for general-purpose electronic equipment rather than automotive use.
Consult official ROHM documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and package compatibility.
Yes, it includes a built-in gate-source protection diode to protect against static electricity.
The absolute maximum drain-source voltage (V_DSS) is rated at 30V.
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