Single FETs, MOSFETs RSH125N03TB1 product image

RSH125N03TB1

$1.96
  • Description:MOSFET N-CH 30V 12.5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1c8be5b48e85 Category: Brand:

  
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RSH125N03TB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 12.5A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RSH125N03TB1

  • Description:MOSFET N-CH 30V 12.5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:9.1mOhm @ 12.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:28 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for RSH125N03TB1

RSH125N03TB1

Single FETs, MOSFETs Overview

The RSH125N03TB1 is a silicon N-channel MOSFET designed for low on-resistance and fast switching applications. It features a built-in gate-source protection diode to guard against static electricity. The device is housed in a compact SOP-8 surface mount package, suitable for power switching and DC/DC converter circuits. Key electrical parameters include a drain-source voltage of 30V, a continuous drain current of 12.5A, and a total power dissipation of 2W at 25°C ambient temperature.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance characteristics for efficient power handling
  • Integrated gate-source protection diode for ESD safety
  • Compact SOP-8 surface mount package design

Single FETs, MOSFETs Applications

  • Power switching circuits
  • DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TB1 corresponds to the taping packaging format with a basic ordering unit of 2500 pieces. Confirm RoHS compliance status through official documentation before procurement. Ensure the component meets general-use electronic equipment requirements as specified by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30V N-channel MOSFET with integrated ESD protection. Consider the 12.5A continuous drain current capability and the thermal resistance of 62.5°C/W when designing heat dissipation strategies. Verify that the SOP-8 package dimensions fit the target PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's 4V Drive Nch MOSFET series, utilizing micro-processing technology to achieve low on-resistance. The product line targets various applications with compact, high-power, and composite options, though this specific model is intended for general-purpose electronic equipment rather than automotive use.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and package compatibility.

Single FETs, MOSFETs FAQ

Does the RSH125N03TB1 include internal protection features?

Yes, it includes a built-in gate-source protection diode to protect against static electricity.

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (V_DSS) is rated at 30V.

RSH125N03TB1RSH125N03TB1
$1.96
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