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RSR010N10HZGTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 100V 1A TSMT3. Review the specifications below when checking this part for your BOM.
The RSR010N10HZGTL is an N-channel small signal MOSFET from ROHM Semiconductor, designed for automotive applications. It features a drain-source voltage of 100V and a continuous drain current of 1A. The device has a maximum on-state resistance of 520mΩ at VGS=10V and ID=1A. Power dissipation is rated at 1.0W, with a junction temperature range of -55°C to +150°C. It includes a built-in gate-source protection diode and meets AEC-Q101 standards.
Verify the specific datasheet revision and ordering suffix (TL) to ensure compatibility with your manufacturing process. Confirm that the component meets all required automotive quality standards before integration into final designs.
Select this component for low-voltage, high-reliability automotive circuits requiring compact packaging. Ensure drive voltages align with the specified threshold characteristics and thermal management requirements are met within the stated power dissipation limits.
This part belongs to ROHM's RSR series of automotive-grade N-channel MOSFETs. It is specifically engineered for space-constrained applications where low on-resistance and robust performance under varying temperatures are critical.
RSR010N10HZG
The maximum pulsed drain current is ±4A.
Yes, it features a built-in gate-source protection diode.
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