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RSS090P03FU6TB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 30V 9A 8SOP. Review the specifications below when checking this part for your BOM.
RSS090P03FU6TB is a P-channel silicon MOSFET in an SOP-8 surface-mount package. It supports a drain-source voltage of -30V and a continuous drain current of -9.0A at 25°C. The device features a typical on-state resistance of 14mΩ at VGS=-10V and 21mΩ at VGS=-4.5V. Total gate charge is typically 7.0nC. Thermal resistance from channel to ambient is 62.5°C/W, with a maximum junction temperature of 150°C.
Verify the exact ordering suffix FU6TB against official ROHM documentation to confirm packaging and tape specifications. Confirm availability status as this component may be subject to lifecycle changes or obsolescence notices. Ensure design compliance with absolute maximum ratings during procurement planning.
Select based on required drive voltage levels, noting that RDS(on) varies significantly between -4V and -10V gate biases. Consider thermal management requirements given the 62.5°C/W thermal resistance in the SOP-8 package. Verify compatibility with circuit capacitance and switching speed needs using provided electrical characteristic curves.
The RSS090P03 series consists of P-channel power MOSFETs designed for general-purpose switching applications. Manufactured by ROHM Semiconductor, these devices utilize silicon technology to provide low on-resistance in a compact footprint suitable for modern electronic equipment.
RRS090P03HZGTB is listed as a similar level replacement with the same pinout and package.
Yes, the datasheet specifies a built-in G-S (Gate-Source) protection diode.
The storage temperature range is specified from -55°C to +150°C.
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