RTL035N03TR

$0.75

Description：MOSFET N-CH 30V 3.5A TUMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:666f7860133e Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RTL035N03TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 3.5A TUMT6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RTL035N03TR

Description：MOSFET N-CH 30V 3.5A TUMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：56mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TUMT6
Package / Case：6-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for RTL035N03TR

RTL035N03TR

Single FETs, MOSFETs Overview

RTL035N03TR is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features a SOT-363T (TSMT6) surface-mount package with six terminals. The device supports a drain-source voltage of 30 V and a continuous drain current of 3.5 A. Key electrical parameters include a typical on-resistance of 0.056 Ω at a gate drive voltage of 2.5 V, and a total gate charge of 4.6 nC. Power dissipation is rated at 1.0 W, with an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized for low-voltage driving applications with a specified drive voltage of 2.5 V.
Features fast switching speeds suitable for high-frequency power conversion circuits.
Constructed in a compact surface-mount package designed for space-constrained PCB layouts.

Single FETs, MOSFETs Applications

DC-DC converter output stages
Motor driver circuits
Power management IC load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR against the required reel quantity of 3000 units. Confirm RoHS compliance status and check for any Product Change Notices regarding package updates or manufacturing location changes before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a small footprint N-channel MOSFET is required for 30V logic-level applications. Ensure the design accounts for the 1.0W thermal limit and verify that the 2.5V gate drive capability meets the controller's output voltage requirements for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's lineup of medium-power silicon MOSFETs designed for automotive and industrial use. It utilizes advanced cell technology to achieve low on-resistance within a miniaturized TSMT6 package, serving as a standard solution for general-purpose switching tasks in consumer electronics.

Single FETs, MOSFETs Replacement Considerations

RF4E080BNTR is documented as a recommended replacement with similar specifications, though it utilizes a different DFN2020L8 package and offers higher current capacity.