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RU1C002UNTCL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 20V 200MA UMT3F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RU1C002UNTCL
- Description：MOSFET N-CH 20V 200MA UMT3F
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 2.5V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：UMT3F
- Package / Case：SC-85
Single FETs, MOSFETs datasheet and documents for RU1C002UNTCL
Single FETs, MOSFETs Overview
The RU1C002UNTCL is a single N-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor using silicon technology. It is housed in an SMD/SMT UMT3F (SC-85) package with three terminals. The device features a drain-source voltage rating of 20 V and supports a continuous drain current of 200 mA at 25°C. Key electrical parameters include a maximum gate-source voltage of ±8 V, a typical on-resistance of 1.2 Ohms at 200 mA and 2.5 V, and a threshold voltage of 1 V at 100 µA. Input capacitance is typically 25 pF at 10 V. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Single N-channel configuration for low-current switching applications
- Optimized for low drive voltages including 1.2V and 2.5V operation
- Compact surface-mount packaging suitable for portable devices
Single FETs, MOSFETs Applications
- Low current consumption mobile devices
- Battery-powered portable electronics
- General purpose signal switching
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'UNTCL' against the official ROHM datasheet to confirm the tape-and-reel quantity and packaging format. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SC-85 footprint matches your PCB design constraints before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance at very low gate drive voltages is required. Compare the 200 mA current limit and 1.2 Ohm resistance against load requirements. Consider the UMT3F package size if space is limited. Verify thermal management needs given the 150 mW power dissipation rating.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's lineup of small-signal MOSFETs designed for portable equipment. It utilizes micro-processing technology to achieve lower on-resistance compared to standard alternatives. The product is intended for general-purpose use in consumer electronics rather than automotive or high-power industrial applications.
Single FETs, MOSFETs Replacement Considerations
The RU1C002ZPTCL is a P-channel variant within the same series but differs in polarity. No direct public substitute part numbers are confirmed for this specific N-channel model in the provided data.
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