ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
RUM003N02T2L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 20V 300MA VMT3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RUM003N02T2L
- Description：MOSFET N-CH 20V 300MA VMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4V
- Rds On (Max) @ Id, Vgs：1Ohm @ 300mA, 4V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：VMT3
- Package / Case：SOT-723
Single FETs, MOSFETs datasheet and documents for RUM003N02T2L
Single FETs, MOSFETs Overview
The RUM003N02T2L is a silicon N-channel MOSFET designed for low voltage drive applications. It features a VDS of 20V and a continuous drain current (ID) of 300mA. The device operates with a gate-source voltage range of ±8V and includes an internal body diode. Electrical characteristics include a maximum on-resistance of 1.4Ω at VGS=1.8V and 300mA, or 1.2Ω at VGS=2.5V. Total power dissipation is rated at 150mW. The component supports a junction temperature up to 150°C and functions within a storage temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient switching performance
- Fast switching speed capabilities
- Optimized for low voltage drive circuits at 1.8V
- Simplified drive circuit requirements
Single FETs, MOSFETs Applications
- Switching applications in portable equipment
- General purpose transistor switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix T2L corresponds to the tape and reel packaging configuration containing 8000 pieces per basic unit. Confirm that the VMT3 package code matches the required footprint for surface mount assembly. Ensure design compliance with the absolute maximum ratings provided in the official datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a small-signal N-channel MOSFET capable of operating with low gate drive voltages around 1.8V. Consider its 300mA continuous current rating and 150mW power dissipation limits for thermal management. The VMT3 package is suitable for compact surface-mount designs where space constraints are critical.
Single FETs, MOSFETs Part Context
This part belongs to the RUM003N02 series manufactured by ROHM Semiconductor. It is classified as a silicon N-channel MOSFET intended for general electronic equipment such as audio-visual devices, office automation tools, and communications equipment. The product is not designated for automotive use or high-reliability safety applications.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for direct substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
