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The RURD620CCS9A is an ultrafast dual diode featuring soft recovery characteristics with a reverse recovery time of less than 25 nanoseconds. It offers a maximum repetitive peak reverse voltage of 200 volts and supports continuous forward currents up to 12 amperes per diode in the dual configuration. The device utilizes silicon nitride passivated ion-implanted epitaxial planar construction, ensuring robust performance under high thermal stress conditions with an operating junction temperature range extending up to 175 degrees Celsius.
Verify the specific suffix SB82068P against official onsemi documentation to confirm packaging type and reel specifications. Ensure compatibility with automated placement equipment requirements. Cross-reference the datasheet revision date to validate current manufacturing status and any potential design changes affecting pinout or thermal resistance.
Select this component for applications requiring fast recovery times below 25ns and high current handling capabilities. Consider the 200V rating for low-voltage DC-DC conversion stages. Evaluate thermal management solutions given the 175°C operating limit and planar package thermal characteristics compared to standard through-hole alternatives.
This part belongs to the ultrafast diode family designed for efficient power conversion. It serves as a replacement for legacy Fairchild Semiconductor parts following the merger. The dual configuration simplifies circuit layout for bridge rectifier or synchronous rectifier topologies where space constraints are critical.
Direct substitutes include the RURD620CCS9A-F085 from onsemi. Verify pin compatibility and thermal resistance values when replacing equivalent parts from other manufacturers such as BYW51 series or MUR series devices.