RZR040P01TL

Single FETs, MOSFETs Overview

The RZR040P01TL is a silicon P-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It features a TSMT3 surface-mount package with three terminals. Key electrical parameters include a drain-source voltage of -12 V and a continuous drain current of -4 A. The device exhibits a typical on-resistance of 0.04 Ω at a gate-source voltage of 1.5 V, supporting low-voltage drive applications. Total gate charge is specified at 37 nC, with power dissipation rated at 0.8 W. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Designed for low voltage drive applications with a 1.5 V gate threshold capability.
• Features low on-resistance characteristics optimized for efficient switching performance.
• Utilizes a compact TSMT3 surface mount package suitable for space-constrained designs.

Single FETs, MOSFETs Applications

• General purpose switching circuits
• Low voltage drive logic interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS standards and check for any obsolescence notices, as some related models in this series may be marked as non-recommended for new designs. Confirm thermal management requirements align with the 0.8 W power dissipation rating under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET requires operation with a 1.5 V drive signal while maintaining low on-resistance. The TSMT3 package offers a small footprint compared to larger alternatives. Consider the -12 V breakdown voltage limit and -4 A current capacity to ensure adequate headroom for the target application's load requirements.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's lineup of low-voltage drive P-channel MOSFETs. It shares design similarities with other members like RAF040P01 but utilizes the TSMT3 package variant. These devices are engineered to replace standard logic-level MOSFETs in systems where lower gate drive voltages are available or required to reduce power consumption.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include RAF040P01TCL, which shares identical electrical characteristics but may differ in packaging details. Verify pinout compatibility and thermal resistance values before swapping components in existing layouts.