S1M1000170D

Single FETs, MOSFETs Overview

The S1M1000170D is an N-channel Silicon Carbide (SiC) MOSFET manufactured by SMC Diode Solutions. It features a drain-source voltage rating of 1700 V and a continuous drain current of 5.2 A at case temperature, with a pulsed drain current capability of 15 A. The device is housed in a TO-247AD through-hole package and has a power dissipation rating of 81 W at case temperature. Classified as a unipolar transistor, it utilizes SiC technology for high-performance switching applications.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide (SiC) technology for enhanced thermal and electrical performance
• High voltage blocking capability rated at 1700 V
• Robust construction suitable for demanding power conversion environments

Single FETs, MOSFETs Applications

• Power supply systems requiring high voltage isolation
• Signal processing circuits utilizing robust semiconductor components
• Industrial equipment employing high-power switching elements

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version to confirm exact thermal resistance values and gate charge parameters, as these can vary between manufacturing batches. Ensure the TO-247AD footprint matches the target PCB design. Cross-reference the manufacturer part number S1M1000170D with authorized distributors to confirm current availability and lead times before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require high-voltage handling capabilities exceeding standard silicon limits. The 1700 V rating makes it suitable for medium-voltage AC/DC converters. Consider the 81 W power dissipation limit and ensure adequate heatsinking is provided to maintain junction temperatures within safe operating areas during continuous operation.

Single FETs, MOSFETs Part Context

This component belongs to the family of Silicon Carbide power devices offered by SMC Diode Solutions. Unlike standard silicon MOSFETs, SiC devices offer superior performance in high-temperature and high-frequency applications. The TO-247AD package provides a standardized mechanical interface for mounting on heat sinks, facilitating integration into larger power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. When evaluating alternatives, ensure the replacement maintains the 1700 V drain-source voltage rating and compatible TO-247AD pinout configuration.