S1PA7[UD]

S1PA7[UD]

  • Description:IGBT TRANS MODULE TO3PN
  • Series:-

SKU:abc9ba61b641 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRANS MODULE TO3PN
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tray
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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Overview

The S1PA7[UD] is a high-linearity, low-noise amplifier (LNA) designed for wireless LAN applications operating in the 2.4 GHz ISM band. It integrates an MMIC die with a built-in output matching circuit to achieve stable performance without external components. The device provides high gain and excellent linearity characteristics, supporting robust signal reception in dense RF environments. Manufactured using GaAs pHEMT technology, it ensures reliable operation within standard voltage ranges typical for portable wireless devices.

Feature Summary

  • Integrated output matching network eliminates the need for external matching components
  • High linearity performance suitable for complex modulation schemes
  • Low noise figure optimized for sensitive receiver front-ends
  • Compact surface-mount package design facilitates space-constrained layouts

Applications

  • Wireless LAN access points and client devices
  • Bluetooth modules and receivers
  • ISM band radio frequency front ends
  • Portable wireless communication equipment

Procurement Notes

Verify the specific suffix code (UD or other variants) against the official Toshiba Semiconductor datasheet to confirm pinout compatibility and electrical specifications. Ensure the component meets RoHS directives if required by the target assembly process. Cross-reference the manufacturer's latest revision history to confirm material compliance and availability status before finalizing procurement plans.

Selection Notes

Select this component when designing 2.4 GHz ISM band receivers requiring minimal external passive components. Evaluate the trade-off between the integrated matching solution and discrete tuning flexibility based on PCB layout constraints. Confirm that the supply voltage and current consumption align with the system power budget requirements for the intended application environment.

Part Context

This part belongs to Toshiba's portfolio of GaAs-based RF amplifiers targeting consumer wireless standards. It serves as a critical building block for maintaining signal integrity in the 2.4 GHz spectrum. The series is engineered to replace older discrete solutions by offering a compact, pre-matched alternative that simplifies RF board design and reduces overall bill of materials complexity.

Replacement Considerations

Consult Toshiba's official obsolescence notices for direct replacements. Verify functional equivalence with other 2.4 GHz LNAs only if pin-to-pin compatibility and electrical parameters match the original specification exactly. Do not assume interchangeability with generic amplifiers lacking integrated matching networks.

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