S3M0016120N

$34.77

Description：MOSFET SILICON CARBIDE SIC 1200V
Series：-
Mfr：SMC Diode Solutions
Package：Bulk

SKU:e4e50da392e7 Category: Single FETs, MOSFETs Brand: SMC Diode Solutions

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Product introduction

S3M0016120N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists SMC Diode Solutions. Its product description is MOSFET SILICON CARBIDE SIC 1200V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for S3M0016120N

Description：MOSFET SILICON CARBIDE SIC 1200V
Series：-
Mfr：SMC Diode Solutions
Package：Bulk
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：23mOhm @ 75A, 18V
Vgs(th) (Max) @ Id：4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs：287 nC @ 18 V
Vgs (Max)：+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds：5251 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：732W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for S3M0016120N

S3M0016120N

Single FETs, MOSFETs Overview

The S3M0016120N is an N-channel Silicon Carbide (SiC) MOSFET manufactured by SMC Diode Solutions. It features a drain-source voltage rating of 1200 V and a continuous drain current capacity of 120 A at case temperature. The device supports a total power dissipation of 732 W under chassis mount conditions. It utilizes the SOT-227 package for robust thermal management in high-power applications.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide technology for superior thermal performance
Designed for high-voltage switching applications
Supports chassis mounting for efficient heat dissipation

Single FETs, MOSFETs Applications

High-power industrial motor drives
Industrial power supplies
Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision, as documentation references 'N2799 REV'. Confirm that the SOT-227 package matches the target chassis mounting requirements. Ensure the application design accounts for the 1200 V rating and 732 W thermal limits to maintain operational reliability.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage and significant current handling capabilities. The SiC material offers advantages over silicon in high-temperature environments. Verify that the system can accommodate the physical dimensions and mounting style of the SOT-227 package.

Single FETs, MOSFETs Part Context

This part belongs to the family of discrete semiconductors produced by SMC Diode Solutions. It serves as a critical switching element in power electronics, distinct from standard silicon MOSFETs due to its wide-bandgap material properties which enable higher efficiency and operating temperatures.