S4D60120D

S4D60120D

$10.91
  • Description:DIODE ARR SIC 1200V 94A TO-247AD
  • Series:-

SKU:7164863717e6 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE ARR SIC 1200V 94A TO-247AD
  • Series:-
  • Mfr:SMC Diode Solutions
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):94A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:-
  • Qualification:-

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S4D60120D

Overview

The S4D60120D is a Silicon Carbide (SiC) Schottky rectifying diode array manufactured by SMC Diode Solutions. It features a common cathode configuration housed in a TO-247-3 package. The device supports a maximum DC reverse voltage of 1200 V and handles a total load current of 94 A, distributed as 30 A per leg. It operates with a junction temperature range up to 175°C, offering ultra-low switching loss and switching speeds that remain independent of operating temperature.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for superior thermal performance
  • Features ultra-low switching loss characteristics
  • Maintains consistent switching speed across varying operating temperatures

Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific package variant, as sources indicate both TO-247-3 and TO-247AD designations. Confirm the manufacturer is SMC Diode Solutions to ensure authenticity. Check RoHS compliance status if required for your assembly process. Ensure the common cathode configuration matches your circuit design requirements before ordering.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities and efficient thermal management. The SiC material choice is critical for reducing conduction and switching losses compared to silicon alternatives. Consider the 175°C junction temperature rating for high-temperature environments where standard silicon devices might fail.

Part Context

This part belongs to the SMC Diode Solutions SiC Schottky rectifier family. It is designed for high-power density applications. The common cathode dual structure allows for bridge or half-bridge configurations. It serves as an upgrade path for silicon-based rectifiers in demanding power electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other 1200V SiC Schottky arrays from different manufacturers only if electrical parameters and pinouts are verified identical.

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