S6008NS2TP

Overview

The S6008NS2TP is a silicon-controlled rectifier (SCR) manufactured by Littelfuse, belonging to the Sxx08xSx series. It features a rated repetitive off-state voltage (VDRM) of 600 V and an on-state RMS current (It RMS) of 8 A. The device operates within a temperature range of -40 °C to +110 °C and utilizes a D2PAK-3 (TO-263-3) surface-mount package. Key electrical characteristics include a forward voltage (Vf) of 1.6 V, a gate trigger voltage (Vgt) of 800 mV, and a gate trigger current (Igt) of 200 uA. The component exhibits a maximum holding current (Ih) of 6 mA and supports a non-repetitive on-state peak current of 100 A.

Feature Summary

• Sensitive gate triggering capability with low gate trigger current requirements for efficient control circuitry.
• Robust thermal performance designed for high-temperature operation up to 110 °C in compact surface-mount packaging.
• High surge current handling capacity suitable for applications requiring transient protection or high initial load switching.

Applications

• AC power control circuits
• Solid-state relays
• Motor speed control systems

Procurement Notes

Verify the specific Littelfuse datasheet for the S6008NS2TP to confirm compliance with RoHS and REACH SVHC regulations prior to integration. Ensure that the ordering suffix matches the required tube packaging quantity of 1000 units as specified in official distributor listings. Cross-reference the manufacturer part number against authorized supply channels to guarantee authenticity and traceability.

Selection Notes

Select this component when a 600 V blocking voltage and 8 A continuous current rating are required in a TO-263-3 footprint. The sensitive gate characteristic makes it suitable for microcontroller-driven applications where minimal gate drive power is available. Verify that the ambient operating temperature does not exceed the 110 °C limit and that heat dissipation strategies accommodate the 1.6 V forward voltage drop at full load.

Part Context

This SCR belongs to the Littelfuse Sxx08xSx family, which standardizes 8 A devices across various voltage ratings. The NS2TP suffix indicates the specific 600 V variant packaged in a D2PAK-3 tube. This series is engineered for general-purpose thyristor applications, offering a balance between high current density and reliable switching performance in industrial and consumer electronics.

Replacement Considerations

The S6008VS3TP is a related 600 V 8 A SCR but uses a TO-251 through-hole package and has a higher gate trigger current of 500 uA. The S6008DS3TP offers similar specifications but in a DPAK-2 (TO-252-2) package. Substitution requires verifying pinout compatibility and ensuring the alternative package fits the PCB layout constraints.

FAQ

What is the maximum non-repetitive on-state peak current for the S6008NS2TP?

The device can withstand a non-repetitive on-state peak current of 100 A.

Does the S6008NS2TP support surface mount technology?

Yes, it is designed for SMD/SMT installation using the D2PAK-3 (TO-263-3) package.

What is the typical gate trigger current required to turn on this SCR?

The gate trigger current (Igt) is specified at 200 uA, indicating sensitive gate characteristics.