SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SB007W03Q-TL-E is a dual common cathode Schottky barrier diode array manufactured by onsemi. It features a maximum repetitive peak reverse voltage of 30V and an average forward rectified current of 70mA per leg. The device utilizes Schottky technology to achieve a low forward voltage drop and fast switching characteristics, with a specified reverse recovery time of 10ns. Operating junction temperature ranges up to 150°C, ensuring reliability in compact surface-mount applications requiring efficient rectification.
Verify the specific suffix TL-E against the official onsemi datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required 30V rating and 70mA current constraints for the target application. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before procurement.
Select this component for applications requiring low forward voltage and fast response in small form factors. The dual common cathode arrangement simplifies layout compared to discrete diodes. Evaluate thermal management requirements based on the 150°C junction limit and ensure the PCB footprint aligns with the SOT-23 or similar surface-mount package dimensions provided in the technical drawings.
This diode array belongs to onsemi's portfolio of small signal Schottky rectifiers designed for consumer and industrial electronics. It complements other low-power protection and rectification components within the company's discrete semiconductor lineup, offering a balance of performance and cost-effectiveness for mass-produced electronic goods.
Consult official cross-reference guides for equivalent dual Schottky arrays with matching 30V/70mA ratings. Verify pin compatibility and thermal characteristics when substituting with parts from other manufacturers to maintain system integrity.