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Product Detailed Parameters
- Description：DIODE SCHOTTKY BARRIER
- Series：*
- Mfr：onsemi
- Package：Bulk
- Diode Configuration：-
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io) (per Diode)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Operating Temperature - Junction：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The SB02-03C-TB-E is a Schottky barrier diode manufactured by onsemi, originally designed by SANYO Electric. It features a single configuration in a 3-CP surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 30V and an average forward rectified current of 200mA. The device exhibits a maximum forward voltage of 550mV at 200mA and a maximum reverse leakage current of 5µA at 30V. Junction temperature ranges from -55°C to +150°C.
Feature Summary
- Low forward voltage for improved efficiency
- Fast reverse recovery time for high-frequency applications
- Low switching noise characteristics
- High reliability due to planar structure
Applications
- Switching regulators
- Converters
- Choppers
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet indicates SANYO Electric as the original designer while the model prefix suggests onsemi distribution. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the absolute maximum ratings with your circuit's peak operating conditions to prevent overstress.
Selection Notes
Select this component for circuits requiring fast switching speeds and low forward voltage drops at moderate current levels. The 30V rating suits low-voltage power rails. Consider the thermal resistance when designing heat dissipation strategies. Verify that the 200mA continuous current capability aligns with the load requirements without exceeding junction temperature limits under worst-case ambient conditions.
Part Context
This component belongs to the SB02 series of Schottky barrier diodes. It utilizes silicon technology for majority carrier conduction. The device is housed in a compact surface-mount package suitable for automated assembly. It is designed for general-purpose rectification in high-frequency environments where speed and low loss are critical performance factors.
Replacement Considerations
Public confirmed substitute part numbers: SB07-03C-TB-E (onsemi).
FAQ
What is the maximum reverse recovery time?
The maximum reverse recovery time is 10ns.
What is the maximum non-repetitive peak forward surge current?
The maximum non-repetitive peak forward surge current is 2A for one half-cycle sine wave.
What is the typical junction capacitance?
The typical junction capacitance is 6pF measured at 10V reverse bias and 1MHz frequency.
