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SB180E-G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Comchip Technology. Its product description is DIODE SCHOTTKY 80V 1A DO41. Review the specifications below when checking this part for your BOM.
The SB180E-G is a silicon Schottky barrier rectifier manufactured by Comchip Technology. It features an 80 V repetitive peak reverse voltage and a 1 A average forward current rating. The device utilizes a DO-41 through-hole package with a single diode configuration. Key electrical parameters include a maximum forward voltage of 850 mV, a reverse leakage current of 500 uA, and a non-repetitive peak forward surge current of 30 A. It operates within a temperature range of -65°C to +150°C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm RoHS certification details directly from the product documentation before procurement. Check for any recent Product Change Notifications (PCN) that may affect material composition or manufacturing location. Ensure the requested quantity matches available reel or cut tape options specified in the official supply data.
Select this component for applications requiring fast switching speeds and low power loss at moderate voltages. The 80 V rating suits general purpose rectification where higher voltage margins are not critical. The DO-41 package is suitable for through-hole mounting processes. Consider the 1 A current limit when designing thermal management solutions for continuous operation.
This part belongs to the SB180E series of ESD protected Schottky rectifiers from Comchip Technology. The series offers various voltage and current combinations in standard through-hole packages. These devices are designed for efficiency in power conversion applications. The SB180E-G specifically denotes the 80 V, 1 A variant within this lineup.
Direct substitutes must match the 80 V reverse voltage, 1 A forward current, and DO-41 package. Verify equivalent forward voltage and reverse leakage characteristics to ensure circuit compatibility.
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