SBC847BDW1T1G

Overview

The SBC847BDW1T1G is a dual NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 380 mW. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a maximum of 450 under the same conditions. The transition frequency (fT) is 100 MHz, and the collector-emitter saturation voltage is 600 mV. It is housed in an SOT-363-6 surface-mount package.

Feature Summary

• Dual NPN configuration integrating two transistors in a single compact SOT-363-6 package for space-efficient circuit design.
• AEC-Q100 qualified for automotive applications, ensuring reliability under specified stress conditions.
• High DC current gain ranging from 200 to 450, suitable for general-purpose amplification and switching tasks.

Applications

• General-purpose signal amplification in consumer electronics
• Switching circuits in industrial control systems
• Automotive electronic modules requiring AEC-Q100 compliance

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS requirements if applicable to your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and traceability before procurement.

Selection Notes

Select this component when a dual NPN configuration is required in a small surface-mount footprint. The 45 V collector-emitter voltage and 100 mA current rating suit low-power general-purpose applications. Consider the 380 mW power dissipation limit and thermal management needs during PCB layout. Verify that the 100 MHz transition frequency meets the signal bandwidth requirements of the target circuit.

Part Context

This part belongs to the BC847BDW1 series of dual NPN transistors from onsemi. It shares the BC847B electrical characteristics but integrates two units into one SOT-363-6 package. This series is designed for general-purpose use, offering a balance of performance and compactness compared to single-transistor alternatives like the BC847BLT1G.

Replacement Considerations

The BC847BPDW1T1G is a documented related component from onsemi featuring similar dual NPN characteristics. Verify pinout compatibility and exact electrical limits against the original datasheet before substitution.