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The onsemi SBC847BDW1T3G is a dual NPN bipolar junction transistor (BJT) array housed in a compact SC-70-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a continuous DC collector current of 100 mA and offers a minimum DC current gain (hFE) of 200. With a transition frequency (fT) of 100 MHz and power dissipation capability of 380 mW, it operates within a temperature range of -55°C to +150°C. This component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and automotive quality standards required by the target application. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement orders.
Select this component when a dual NPN topology is required in a minimal footprint. Compare power dissipation limits and thermal resistance against circuit requirements. Verify that the 45 V collector-emitter voltage exceeds the maximum operating voltage of the load. Confirm compatibility with available PCB land patterns for the SC-70-6 package.
This part belongs to the BC847BDW1 series of dual NPN transistors from onsemi. It shares architectural similarities with other members like BC847BDW1T1G but differs in packaging quantity and reel specifications. The series is designed for high-volume manufacturing and cost-sensitive applications requiring reliable small-signal performance.
Direct substitutes include BC847BDW1T1G and NSVBC847BLT3G, though pinout and electrical ratings must be verified. Alternative packages such as SOT-363 may require schematic redesign. Always consult manufacturer cross-reference lists for validated replacements.