SBC847CDW1T1

Overview

The onsemi SBC847CDW1T1 is a dual NPN small-signal transistor array housed in a surface-mount US package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device has a minimum DC current gain (hFE) of 200 and a transition frequency of 100 MHz. Power dissipation is rated at 380 mW, with an operating temperature range from -55°C to 150°C. The component meets AEC-Q101 automotive standards.

Feature Summary

• Dual NPN configuration within a single compact surface-mount package
• Automotive-grade reliability compliant with AEC-Q101 standards
• High DC current gain for efficient signal amplification

Applications

• Automotive electronic circuits requiring reliable switching
• General-purpose signal amplification
• Low-power digital logic interfacing

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the supplier provides traceability documentation for AEC-Q101 compliance. Check for RoHS material declarations prior to integration into final assemblies.

Selection Notes

Select this component when a dual NPN topology is required in a minimal footprint. Compare hFE ranges and power dissipation limits against circuit requirements. Consider thermal management capabilities if operating near the maximum junction temperature limit.

Part Context

This part belongs to the BC847 series of small-signal transistors. It serves as a dual-channel alternative to single transistors, reducing board space. The 'S' prefix typically denotes specific automotive or enhanced reliability variants within the manufacturer's portfolio.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.