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The SBC856BDW1T3G is a dual PNP bipolar junction transistor (BJT) from the BC856B series, manufactured by onsemi. It is housed in an SOT-363 surface-mount package designed for low-power applications. The device features a collector-emitter voltage of -65 V and a collector-base voltage of -80 V. Continuous collector current is rated at -100 mA with a peak current of -200 mA. Total power dissipation is 380 mW at 25°C ambient temperature. The DC current gain ranges from 220 to 475 at -10 mA. The transition frequency is 100 MHz. Operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and automotive qualification status. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement decisions.
Select this component when dual PNP switching or amplification is required in space-constrained designs. Ensure the circuit operates within the specified -65 V collector-emitter voltage limit and -100 mA continuous current rating. Verify thermal management requirements given the 380 mW total device dissipation constraint.
This part belongs to the BC856BDW1T1G family of dual general-purpose transistors. It shares the same electrical characteristics as the BC856BDW1T1G but differs in reel packaging quantity. The 'S' prefix indicates automotive qualification and specific manufacturing site controls.
Direct substitutes include BC856BDW1T1G and BC856BDW1T3G. Other compatible parts from the same datasheet include BC857BDW1T1G and BC857CDW1T1G, provided voltage ratings align with application needs.