SBC857BDW1T1G-M02

SBC857BDW1T1G-M02

  • Description:TRANS 45V 100MA SC88/SC70
  • Series:SBC857BDW1T1G

SKU:2e8f1e87fc6d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 45V 100MA SC88/SC70
  • Series:SBC857BDW1T1G
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:380mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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SBC857BDW1T1G-M02

Overview

The onsemi SBC857BDW1T1G-M02 is a dual PNP bipolar junction transistor (BJT) housed in an SOT-363 surface-mount package. It features a maximum DC collector current of -100 mA and a collector-emitter voltage rating of -45 V. The device includes an AEC-Q101 automotive qualification, ensuring reliability for harsh environments. Key electrical parameters include a minimum DC current gain (hFE) of 220 and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 380 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

  • Dual PNP configuration within a compact six-pin SOT-363 package
  • Automotive-grade reliability certified under AEC-Q101 standards
  • High DC current gain suitable for general-purpose switching applications

Applications

  • Automotive signal processing circuits
  • General-purpose switching applications
  • Low-power amplifier stages

Procurement Notes

Verify the specific M02 suffix against official manufacturer documentation to confirm any distinct marking or traceability requirements. Ensure compatibility with standard SOT-363 footprints during PCB layout. Confirm that the AEC-Q101 qualification meets specific project reliability standards before finalizing component selection.

Selection Notes

Select this component for designs requiring dual PNP transistors in a minimal footprint. Compare power dissipation limits against thermal constraints. Verify that the -45 V voltage rating exceeds peak circuit voltages. Consider the 100 MHz transition frequency for high-speed switching needs relative to alternative single-transistor solutions.

Part Context

This part belongs to the BC857 series of small-signal PNP transistors. It shares core electrical characteristics with other variants like the BC857B but differs in packaging and specific gain binning. The SOT-363 package allows for space-efficient integration compared to larger discrete packages while maintaining robust performance metrics.

Replacement Considerations

Direct substitutes include the NSVBC857BDW1T1G and generic equivalents meeting SOT-363 dual PNP specifications. Verify pinout compatibility and ensure hFE ranges align with design requirements when cross-referencing datasheets.

SBC857BDW1T1G-M02SBC857BDW1T1G-M02

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