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The onsemi SBC857BDW1T1G-M02 is a dual PNP bipolar junction transistor (BJT) housed in an SOT-363 surface-mount package. It features a maximum DC collector current of -100 mA and a collector-emitter voltage rating of -45 V. The device includes an AEC-Q101 automotive qualification, ensuring reliability for harsh environments. Key electrical parameters include a minimum DC current gain (hFE) of 220 and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 380 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific M02 suffix against official manufacturer documentation to confirm any distinct marking or traceability requirements. Ensure compatibility with standard SOT-363 footprints during PCB layout. Confirm that the AEC-Q101 qualification meets specific project reliability standards before finalizing component selection.
Select this component for designs requiring dual PNP transistors in a minimal footprint. Compare power dissipation limits against thermal constraints. Verify that the -45 V voltage rating exceeds peak circuit voltages. Consider the 100 MHz transition frequency for high-speed switching needs relative to alternative single-transistor solutions.
This part belongs to the BC857 series of small-signal PNP transistors. It shares core electrical characteristics with other variants like the BC857B but differs in packaging and specific gain binning. The SOT-363 package allows for space-efficient integration compared to larger discrete packages while maintaining robust performance metrics.
Direct substitutes include the NSVBC857BDW1T1G and generic equivalents meeting SOT-363 dual PNP specifications. Verify pinout compatibility and ensure hFE ranges align with design requirements when cross-referencing datasheets.