SBC857BDW1T1G

Overview

The SBC857BDW1T1G is a dual general-purpose PNP transistor housed in an SOT-363 surface-mount package. It features a maximum collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device provides a minimum DC current gain (hFE) of 220 at -10 mA and up to 475 at -2 mA. It operates within a temperature range of -55°C to +150°C, supports peak collector currents of -200 mA, and has a total power dissipation of 380 mW.

Feature Summary

• Dual PNP transistors designed for low-power surface mount applications
• Qualified for automotive applications with AEC-Q101 certification
• Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

• General purpose amplifier circuits
• Automotive electronic systems requiring unique site control
• Low power switching applications

Procurement Notes

Verify the specific ordering suffix 'S' indicates AEC-Q101 qualification and PPAP capability. Confirm the package type is SOT-363 and that the device is Pb-Free. Ensure the manufacturer is onsemi and check for any discontinuation notices before finalizing procurement plans.

Selection Notes

Select this component when dual PNP configurations are required in a compact SOT-363 footprint. Consider the -45 V collector-emitter voltage rating and the specific hFE ranges (220 to 475) for appropriate biasing. Verify thermal resistance limits for high ambient temperature environments.

Part Context

This part belongs to the BC857BDW1T1G/SBC857BDW1T1G series, which includes complementary NPN types like the BC847. It shares the same SOT-363 package as other devices in the BC856/BC857/BC858 family but offers distinct voltage and gain characteristics tailored for general-purpose amplification.

Replacement Considerations

Direct substitutes include BC857BDW1T1G or BC857CDW1T1G from onsemi. Other manufacturers may offer equivalent parts in SOT-363 packages, but verify pinout compatibility and electrical ratings such as VCEO and hFE.