SBR30E45CT

Diode Arrays Overview

The SBR30E45CTB is a Super Barrier Rectifier (SBR) diode manufactured by Diodes Incorporated. It features a dual common cathode configuration with a 30 A average forward current rating and a 45 V repetitive peak reverse voltage. The device utilizes silicon technology in a D2PAK-3 (TO-263-3) surface-mount package. Key electrical characteristics include a typical forward voltage of 0.55 V at 10 A and a maximum reverse leakage current of 0.48 mA. It operates within a junction temperature range of -65 °C to +150 °C.

Diode Arrays Feature Summary

• Super Barrier Rectifier technology providing low forward voltage drop for high efficiency
• Soft, fast switching capability suitable for high-frequency applications
• Reliable high-temperature operation up to 150 °C junction temperature

Diode Arrays Applications

• Switch mode power supplies
• Solar bypass junction boxes
• DC-DC converters

Diode Arrays Procurement Notes

Verify the exact suffix against official documentation, as variations like CTB indicate specific packaging or tape-and-reel configurations. Confirm RoHS compliance status via the manufacturer's latest datasheet. Check for Product Change Notifications (PCN) or End-of-Life (EOL) notices, as availability may be restricted. Ensure the ordering part number matches the required package style and electrical ratings precisely.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for synchronous rectification or freewheeling in low-voltage, high-current circuits. The SBR technology offers a superior trade-off between forward voltage drop and reverse leakage compared to standard Schottky diodes. Verify that the 45 V rating accommodates transient voltage spikes in the target application circuit.

Diode Arrays Part Context

This device belongs to the SBR30E45 series from Diodes Incorporated, which integrates patented Super Barrier Rectifier technology. This process combines the low forward voltage of Schottky diodes with the high-temperature stability and reliability of silicon PN junctions. The series is designed to replace traditional Schottky diodes in applications demanding higher operating temperatures and reduced leakage currents.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other SBR series devices from Diodes Incorporated only if electrical parameters and pinouts match exactly.