SC8673040L

SC8673040L

$2.15
  • Description:MOSFET 2N-CH 30V 16A/46A 8-HSO
  • Series:-

SKU:b49323bdcc9e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 16A/46A 8-HSO
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:16A, 46A
  • Rds On (Max) @ Id, Vgs:10mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:3V @ 5.85mA
  • Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1092pF @ 10V
  • Power - Max:1.7W, 2.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerSMD, Flat Leads
  • Supplier Device Package:HSO8-F3-B
  • Grade:-
  • Qualification:-

Download product information

SC8673040L

Overview

The SC8673040L is an asymmetric dual N-channel power MOSFET manufactured by Panasonic Industry. It integrates two distinct transistors within a single HSO8-F3-B surface-mount package. FET1 provides a drain-source voltage (VDS) of 30 V, continuous current (ID) of 16 A, and typical on-resistance (RDS(on)) of 10 mΩ at VGS = 4.5 V. FET2 offers the same 30 V rating but supports higher continuous current of 25 A with a lower typical RDS(on) of 1.9 mΩ at VGS = 4.5 V. The device operates within an ambient temperature range of -40°C to +85°C and complies with RoHS standards.

Feature Summary

  • Asymmetric dual configuration combining a high-current low-resistance channel with a standard switching channel in one package
  • Low gate charge characteristics enabling efficient drive requirements for both channels
  • Surface-mount HSO8-F3-B packaging designed for automated assembly processes

Applications

  • DC-DC converter circuits requiring mixed current handling capabilities
  • Power management modules utilizing compact dual-transistor topologies
  • General-purpose electronic equipment power stages

Procurement Notes

Verify component authenticity through authorized distribution channels due to discontinued status. Confirm specific manufacturing lot dates against project timelines as availability is limited. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering. Validate pinout alignment with PCB land patterns during integration planning.

Selection Notes

Evaluate thermal dissipation requirements carefully given the asymmetric current ratings between FET1 and FET2. Compare total gate charge values against available driver capabilities to ensure adequate switching speeds. Assess safe operating area limits under expected load conditions to prevent thermal runaway. Consider the physical dimensions of the HSO8-F3-B package for spatial constraints.

Part Context

This component belongs to the SC8 series of silicon N-channel power MOSFETs produced by Panasonic Industry. The series focuses on providing integrated solutions for applications needing multiple switching elements within a minimal footprint. The SC8673040L specifically addresses designs requiring differentiated performance levels from paired transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit parameters if sourcing alternative components from other manufacturers.

SC8673040LSC8673040L
$2.15
Buy Now