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The SC8673040L is an asymmetric dual N-channel power MOSFET manufactured by Panasonic Industry. It integrates two distinct transistors within a single HSO8-F3-B surface-mount package. FET1 provides a drain-source voltage (VDS) of 30 V, continuous current (ID) of 16 A, and typical on-resistance (RDS(on)) of 10 mΩ at VGS = 4.5 V. FET2 offers the same 30 V rating but supports higher continuous current of 25 A with a lower typical RDS(on) of 1.9 mΩ at VGS = 4.5 V. The device operates within an ambient temperature range of -40°C to +85°C and complies with RoHS standards.
Verify component authenticity through authorized distribution channels due to discontinued status. Confirm specific manufacturing lot dates against project timelines as availability is limited. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering. Validate pinout alignment with PCB land patterns during integration planning.
Evaluate thermal dissipation requirements carefully given the asymmetric current ratings between FET1 and FET2. Compare total gate charge values against available driver capabilities to ensure adequate switching speeds. Assess safe operating area limits under expected load conditions to prevent thermal runaway. Consider the physical dimensions of the HSO8-F3-B package for spatial constraints.
This component belongs to the SC8 series of silicon N-channel power MOSFETs produced by Panasonic Industry. The series focuses on providing integrated solutions for applications needing multiple switching elements within a minimal footprint. The SC8673040L specifically addresses designs requiring differentiated performance levels from paired transistors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit parameters if sourcing alternative components from other manufacturers.