SCH2201-TL-E

Overview

The SCH2201-TL-E is a dual NPN bipolar junction transistor array manufactured by onsemi. It features a surface-mount SMD6 package configuration containing two independent NPN transistors. The device supports a maximum DC collector current of 0.8 A and a collector-emitter voltage rating of 15 V. Key electrical specifications include a transition frequency of 440 MHz and a power dissipation capacity of 400 mW.

Feature Summary

• Dual NPN transistor architecture within a single compact surface-mount package
• High-speed switching capability with a 440 MHz transition frequency
• Integrated design simplifies circuit layout for low-voltage applications

Applications

• Low-voltage signal switching circuits
• General-purpose amplifier stages
• Digital logic interface buffers

Procurement Notes

Verify the specific suffix against official onsemi documentation to confirm exact binning and tape-and-reel specifications. Ensure the ordering part number matches the required thermal and electrical characteristics precisely. Cross-reference with authorized distributors to confirm current availability status and lead times before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration is required in a small footprint. The 15 V rating suits low-voltage logic systems. Consider the 400 MHz speed for moderate-frequency applications. Verify that the 0.8 A current limit meets the load requirements of the target circuit design.

Part Context

This part belongs to onsemi's discrete bipolar transistor array family. It provides a space-efficient solution compared to using two separate single transistors. The SMD6 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes in consumer electronics and industrial control modules.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.