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Product Detailed Parameters
- Description：NCH+SBD 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SCH2819-TL-H is a composite switching device manufactured by onsemi, integrating an N-channel silicon MOSFET and a Schottky barrier diode within a single package. The MOSFET component utilizes the SCH1419 architecture, while the diode corresponds to the SS0503 specification. This configuration facilitates high-density mounting in electronic circuits. Key electrical characteristics include low ON-resistance for efficient conduction and ultrahigh-speed switching capabilities. The device supports 2.5V drive levels, making it suitable for logic-compatible control applications. The integrated Schottky barrier diode offers a short reverse recovery time and low forward voltage drop, enhancing overall system performance in general-purpose switching scenarios.
Feature Summary
- Composite design combining an N-channel silicon MOSFET and a Schottky barrier diode in one package
- Low ON-resistance for efficient power handling
- Ultrahigh-speed switching capability
- Supports 2.5V drive levels
- Schottky diode features short reverse recovery time and low forward voltage
Applications
- General-purpose switching devices
- High-density mounting applications
- Logic-level driven switching circuits
Procurement Notes
Verify the specific suffix TL-H against official datasheets to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints designed for this composite MOSFET-Schottky configuration. Cross-reference manufacturer documentation for any recent product change notifications or lifecycle status updates prior to finalizing procurement plans.
Selection Notes
Select this component when space constraints require integrating both a switching transistor and a freewheeling diode into a single footprint. The 2.5V drive requirement should align with the control logic voltage levels of the target application. Consider the thermal management needs associated with the combined power dissipation of both internal components during operation.
Part Context
This part belongs to onsemi's family of composite switching devices that merge MOSFET and diode technologies. It shares architectural similarities with other Sanyo-derived onsemi products like the SCH1419 MOSFET and SS0503 diode, which are internally integrated. The SCH2819 series is designed to simplify circuit design by reducing component count and board area compared to discrete solutions.
Replacement Considerations
Direct replacements must match the composite MOSFET-Schottky structure. Verify pinout compatibility and electrical parameters such as Rds(on) and Vf. Check for equivalent packages and drive voltage requirements. Consult official substitution guides for confirmed alternatives.
