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SCS110KGC is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE SIL CARB 1200V 10A TO220AC. Review the specifications below when checking this part for your BOM.
The SCS110KGC is a Silicon Carbide Schottky Barrier Diode manufactured by ROHM Semiconductor. It features a repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 10 A at a case temperature of 132°C. The device operates within a junction temperature range of -55°C to +175°C, with a maximum total power dissipation of 45 W. Key electrical characteristics include a typical forward voltage of 1.5 V at 10 A and 25°C, a maximum reverse current of 10 mA at 1200 V, and a switching time of 16 ns. The component utilizes a TO-220AC package for through-hole mounting.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking specifications. Confirm RoHS compliance status directly with the supplier or official datasheet before procurement. Check for any regional distribution restrictions or obsolescence notices associated with this part number prior to finalizing orders.
Select this component for circuits requiring high-voltage blocking capability and fast switching speeds. Ensure thermal management design accommodates the specified power dissipation limits at the intended operating case temperature. Verify that the application circuit does not exceed the absolute maximum ratings for surge current or junction temperature during transient conditions.
This component belongs to the SCS110KG series of Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor. It is designed as an alternative to traditional silicon rectifiers in high-performance power electronics. The series emphasizes efficiency improvements through lower switching losses and improved thermal stability under varying load conditions.
SCS110KG
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