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SCT3030ARC14 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 650V 70A TO247-4L. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCT3030ARC14
- Description：SICFET N-CH 650V 70A TO247-4L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id：5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs：104 nC @ 18 V
- Vgs (Max)：+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1526 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：262W
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for SCT3030ARC14
Single FETs, MOSFETs Overview
The SCT3030ARC14 is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a 650V drain-source breakdown voltage and a continuous drain current of 70A at case temperature. The device exhibits a maximum on-resistance of 30mΩ, with a gate charge of 104nC. It operates within a temperature range of -55°C to +175°C and dissipates up to 262W. Packaged in a TO-247-4L through-hole format, it meets AEC-Q101 automotive qualification standards.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide material for high thermal stability and low conduction losses
- Automotive qualified under AEC-Q101 standards for reliability
- Designed for high-frequency switching applications with fast rise and fall times
Single FETs, MOSFETs Applications
- Automotive power electronics systems
- High-efficiency DC-DC converters
- Industrial motor drives
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant, as the model suffix indicates a TO-247-4L configuration which differs from standard three-terminal versions. Confirm that the supplier provides official datasheets matching this exact part number to ensure correct pinout compatibility. Check for RoHS compliance documentation if required for your assembly process.
Single FETs, MOSFETs Selection Notes
Select this component when a 650V SiC MOSFET with automotive qualification is required. Compare the 30mΩ on-resistance against system efficiency targets. Ensure the driver circuit can handle the gate charge requirements. Verify that the PCB layout supports the TO-247-4L footprint and thermal management needs for 262W dissipation.
Single FETs, MOSFETs Part Context
This part belongs to the SCT3x series of ROHM's silicon carbide MOSFETs. It shares similar electrical characteristics with other 650V variants in the lineup but differs in packaging. The TO-247-4L package offers enhanced thermal performance compared to smaller packages, suitable for high-power density designs.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include SCT3030ALHRC11 and SCT3030KLHRC11, though these use TO-247-3 packages. Verify pinout compatibility before substitution, as the four-terminal package may require different mounting considerations.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
