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SCTH40N120G2V-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is SILICON CARBIDE POWER MOSFET 120. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCTH40N120G2V-7
- Description：SILICON CARBIDE POWER MOSFET 120
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id：4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 18 V
- Vgs (Max)：+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：1233 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：238W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：H2PAK-7
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for SCTH40N120G2V-7
Single FETs, MOSFETs Overview
The SCTH40N120G2V-7 is a silicon carbide power MOSFET utilizing ST’s second-generation SiC technology. It features an H²PAK-7 package with a drain tab for thermal management. Key electrical ratings include a 1200 V drain-source voltage (VDS), a maximum on-resistance of 100 mΩ, and a continuous drain current of 36 A at 25 °C case temperature. The device supports a maximum operating junction temperature of 175 °C and includes a dedicated source Kelvin pin to enhance switching efficiency.
Single FETs, MOSFETs Feature Summary
- Very high operating junction temperature capability up to 175 °C
- Extremely low gate charge and input capacitance for efficient switching
- Source Kelvin pin design for increased efficiency
- Fast and robust intrinsic body diode
Single FETs, MOSFETs Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code SCTH40N120G2V-7 against the latest official datasheet revision DS13719 Rev 2. Confirm that the H²PAK-7 package dimensions and tape-and-reel specifications match the required PCB footprint and automated assembly equipment constraints. Ensure compatibility with recommended operational gate-source voltage limits of -5 V to 18 V.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high thermal stability and low switching losses in compact form factors. The H²PAK-7 package provides superior heat dissipation compared to standard surface-mount options. Consider the 100 mΩ maximum RDS(on) when calculating conduction losses at higher temperatures or currents exceeding 20 A.
Single FETs, MOSFETs Part Context
This device belongs to STMicroelectronics' second-generation silicon carbide MOSFET family. It is designed to replace traditional silicon-based solutions in high-frequency and high-temperature applications. The H²PAK-7 packaging allows for direct replacement in certain existing board layouts while offering improved thermal performance.
Single FETs, MOSFETs Replacement Considerations
Check for updated product status as the device may be obsolete. Verify pinout compatibility if substituting with other H²PAK-7 SiC MOSFETs from the same manufacturer series.
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