SD1013-03

SD1013-03

  • Description:RF TRANS NPN 35V 150MHZ M113
  • Series:-

SKU:0cfd1289b505 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 35V 150MHZ M113
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):35V
  • Frequency - Transition:150MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:10dB
  • Power - Max:13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 200mA, 5V
  • Current - Collector (Ic) (Max):1A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:M113
  • Supplier Device Package:M113
  • Grade:-
  • Qualification:-

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SD1013-03

Overview

The SD1013-03 is a high-reliability single NPN transistor manufactured by Microsemi. It features a flange mount package with four terminals and a plastic/epoxy body. The device supports a maximum collector current of 1 A and a collector-emitter voltage of 35 V. Key electrical parameters include a minimum DC current gain (hFE) of 10, a maximum collector capacitance of 15 pF, and operation in the very high frequency band. The component is rated for a maximum operating temperature of 200 °C and is classified as non-RoHS compliant.

Feature Summary

  • High reliability construction suitable for demanding environments
  • Flange mount configuration for secure mechanical attachment
  • Very high frequency band operation capability

Applications

  • High-frequency amplification circuits
  • Military and aerospace electronic systems
  • Industrial equipment requiring robust semiconductor components

Procurement Notes

Verify RoHS compliance status prior to integration, as this specific part number is listed as non-compliant. Confirm that the flange mount package dimensions align with the thermal management and mechanical constraints of the target assembly. Ensure sourcing channels provide traceability documentation consistent with high-reliability requirements.

Selection Notes

Select this component when a single NPN transistor with integrated resistor functionality is required for very high frequency applications. The 1 A current rating and 35 V breakdown voltage define the operational limits. Consider the 200 °C maximum junction temperature for thermal design. Verify that the flange mount form factor fits the available board space and mounting hardware.

Part Context

This component belongs to the Microsemi discrete semiconductor portfolio, specifically within the transistor category. It is designed for applications requiring high reliability and performance in the very high frequency range. The manufacturer provides technical specifications detailing the electrical characteristics and physical dimensions necessary for circuit design and integration.

Replacement Considerations

Consult official Microsemi documentation or authorized distributors for verified equivalent part numbers. Do not assume cross-compatibility with generic NPN transistors without verifying pinout, voltage ratings, and frequency response characteristics against the original specification sheet.

SD1013-03SD1013-03

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