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Product Detailed Parameters
- Description：RF TRANS NPN 18V 175MHZ TO-39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：18V
- Frequency - Transition：175MHz
- Noise Figure (dB Typ @ f)：-
- Gain：12dB
- Power - Max：8W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 50mA, 5V
- Current - Collector (Ic) (Max)：640mA
- Operating Temperature：200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The SD1127 is a silicon NPN RF power transistor designed for VHF mobile communications applications up to 175 MHz. It features a grounded emitter configuration and provides a power gain (Gp) of 12 dB at 12.5V and 175 MHz. The device supports a minimum output power (Pout) of 4.0 W. Manufactured by Microsemi Corporation, this component belongs to the RF & Microwave Transistors category specifically intended for VHF FM mobile applications.
Feature Summary
- Designed for VHF mobile communications applications
- Grounded emitter configuration
- Silicon NPN RF power construction
Applications
- VHF FM mobile applications
- VHF communications systems
