SD1224-02

Overview

The SD1224-02 is an epitaxial silicon NPN planar transistor designed for 28 V FM Class C RF amplifiers in ground station transmitters. It operates at 175 MHz with a minimum output power of 40 W and efficiency of 60%. The device features a collector-emitter breakdown voltage of 35 V, maximum power of 60 W, and gain of 7.6 dB. It supports a collector current of 5 A and junction temperature up to 200°C.

Feature Summary

• Epitaxial silicon NPN planar construction optimized for RF applications
• Designed specifically for 28 V FM Class C amplifier circuits
• High efficiency performance exceeding 60% minimum threshold

Applications

• Ground station transmitter RF amplification
• FM broadcast signal processing
• Class C RF power stages

Procurement Notes

Verify the specific datasheet version from Microsemi or authorized distributors to confirm electrical characteristics match application requirements. Ensure the M113 package style aligns with thermal and mechanical constraints. Cross-reference pinout configurations before integration to prevent circuit damage due to incorrect mounting orientation.

Selection Notes

Select this component when designing 28 V FM Class C amplifiers requiring high efficiency and moderate gain. Consider the 35 V breakdown voltage and 60 W power limit for safety margins. Evaluate thermal management needs given the 200°C junction temperature rating and 5 A current capacity for reliable operation in ground station environments.

Part Context

Part of the Microsemi SD series of RF and microwave transistors. Designed for robust performance in communication infrastructure. Shares family characteristics with related models like SD1224 but offers specific optimizations for 28 V operation and Class C efficiency requirements in professional broadcasting equipment.

Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify that any replacement maintains identical pinout, voltage ratings, and thermal characteristics to ensure seamless integration without redesigning the amplifier circuit board or biasing network.