SD1731

Overview

The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. It features emitter ballasting for improved thermal stability and high power handling. The device supports a maximum collector current of 20 A and delivers up to 233 W of power. Key electrical parameters include a minimum DC current gain (hFE) of 15 at 10 A collector current and 6 V collector-emitter voltage. The operating junction temperature reaches 200°C, ensuring robust performance in demanding RF applications.

Feature Summary

• Epitaxial silicon NPN planar construction optimized for HF SSB communications
• Integrated emitter ballasting for enhanced thermal stability
• High power capability with 233 W maximum dissipation
• Robust thermal performance supporting 200°C junction temperature

Applications

• SSB communications transmitters
• HF RF power amplification stages
• Industrial RF heating systems
• Broadcast equipment power output stages

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm package integrity and marking alignment with official datasheet specifications. Check lifecycle status as the part may be obsolete; validate availability and lead times directly with suppliers before procurement commitment.

Selection Notes

Select this component for high-power HF SSB applications requiring stable NPN operation. Ensure circuit design accommodates 20 A collector current and 233 W power dissipation. Verify thermal management solutions support 200°C junction temperatures. Consider emitter ballasting benefits for thermal stability in dense packaging environments.

Part Context

Part of STMicroelectronics' RF bipolar transistor portfolio targeting HF communication markets. Designed for high-efficiency power amplification in linear RF modes. Complements other NPN devices in similar voltage and power ranges for system scalability.

Replacement Considerations

No public confirmed substitute part numbers are documented. Evaluate equivalent NPN RF transistors with matching 50 V rating, 20 A current capacity, and comparable power dissipation characteristics from alternative manufacturers if direct replacement is required.

FAQ

What is the primary application of the SD1731?

The SD1731 is designed primarily for SSB communications and HF RF power amplification.

How does the SD1731 ensure thermal stability?

It utilizes integrated emitter ballasting to improve thermal stability during high-power operation.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200°C.