SD1A180E

Overview

The SD1A180E is a silicon unidirectional thyristor (SIDAC) manufactured by Diodes Incorporated, housed in the JEDEC DO-41 molded plastic package. It features a peak repetitive off-state voltage ($V_{DRM}$) of 150 V and an on-state RMS current ($I_{T(RMS)}$) rating of 1 A at 80 °C. The device exhibits a breakover voltage ($V_{BO}$) range of 170 to 190 Vdc with a maximum holding current ($I_H$) of 60 mA. Key electrical characteristics include a typical peak on-state voltage of 1.1 V at 1 A and a maximum lead solder temperature of 260 °C. The component operates within a junction temperature range of -40 °C to +125 °C.

Feature Summary

• Compact DO-41 package design intended for space-saving applications
• Silicon unidirectional thyristor technology providing stable switching performance
• Lead-free terminal plating compliant with RoHS 2011/65/EU standards

Applications

• Gas igniters

Procurement Notes

Verify the specific manufacturer designation upon receipt, as the datasheet indicates LSC as the document issuer while Diodes Incorporated is listed as the brand. Confirm that the DO-41 package matches the required mechanical footprint for the target PCB layout. Ensure compliance with the stated RoHS 2011/65/EU directive if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a precise breakover voltage between 170 V and 190 V is required for overvoltage triggering or latching applications. The 1 A RMS current rating supports moderate load handling, while the 150 V blocking capability defines the maximum steady-state voltage tolerance. Consider the thermal resistance of 15 °C/W for heat dissipation calculations in enclosed environments.

Part Context

The SD1A180E belongs to the SIDAC family of silicon unidirectional thyristors designed for high-voltage triggering and protection roles. Unlike standard diodes, it functions as a voltage-triggered switch, remaining non-conductive until the breakover threshold is reached. This behavior distinguishes it from Zener diodes or TVS devices, positioning it specifically for ignition circuits and latch-up protection scenarios.

Replacement Considerations

Substitutes must match the 150 V $V_{DRM}$, 1 A $I_{T(RMS)}$, and DO-41 package form factor. Verify that alternative SIDACs maintain a similar $V_{BO}$ range of 170–190 V to ensure consistent circuit triggering behavior without modifying existing bias networks.