SDS065J016G3-ISATH

$4.88

Description：DIODE ARR SIC 650V 25A TO247-3L
Series：Sanan TO247

SKU:7e3becd61d93 Category: Diode Arrays Brand: Luminus Devices Inc.

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Product introduction

SDS065J016G3-ISATH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Luminus Devices Inc.. Its product description is DIODE ARR SIC 650V 25A TO247-3L. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for SDS065J016G3-ISATH

Description：DIODE ARR SIC 650V 25A TO247-3L
Series：Sanan TO247
Mfr：Luminus Devices Inc.
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io) (per Diode)：25A
Voltage - Forward (Vf) (Max) @ If：1.5 V @ 8 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：24 µA @ 650 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3L
Grade：-
Qualification：-

Diode Arrays datasheet and documents for SDS065J016G3-ISATH

SDS065J016G3-ISATH

Diode Arrays Overview

The SDS065J016G3-ISATH is a third-generation Silicon Carbide Schottky Barrier Diode rated for 650V repetitive peak reverse voltage. It features a TO-247-3L package and supports an operating junction temperature range from -55°C to 175°C. The device exhibits a typical forward voltage of 1.30V at 8A and 25°C, with a maximum reverse current of 24μA at 175°C. Total capacitive charge is specified at 22nC per leg.

Diode Arrays Feature Summary

Utilizes Silicon Carbide material for high-speed switching performance
Exhibits no reverse recovery during turn-off operations
Maintains stable switching behavior independent of temperature variations
Enables system miniaturization through reduced cooling requirements

Diode Arrays Applications

Industrial power supplies
Industrial UPS systems
Battery chargers
Solar inverters
Switch mode power supplies

Diode Arrays Procurement Notes

Verify the specific suffix ISATH against official manufacturer documentation to confirm packaging details and unit quantity. Ensure compliance with RoHS standards as stated in the datasheet. Confirm mounting torque specifications for the TO-247-3L package before assembly. Validate thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and elevated temperature tolerance. Consider the low leakage current and absence of reverse recovery for efficiency gains. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Ensure input voltages remain within the 650V DC blocking limit.

Diode Arrays Part Context

This part belongs to the third-generation SiC Schottky Barrier Diode series developed by Hunan Sanan Semiconductor Co., Ltd. It represents an advancement over silicon-based solutions by offering higher efficiency and lower losses. The technology allows for lightweight system designs suitable for demanding industrial environments.