SDS065J040G3-ISATH

Diode Arrays Overview

The SDS065J040G3-ISATH is a third-generation silicon carbide Schottky barrier diode manufactured by Hunan Sanan Semiconductor. It features a TO-247-3L package and operates with a repetitive peak reverse voltage of 650V. The device supports a continuous forward current of up to 40A per leg at a case temperature of 150°C, or 50A per leg at 25°C. Key electrical parameters include a typical forward voltage of 1.35V at 20A and 25°C, and a total capacitive charge of 55nC at 400V reverse bias. The junction temperature range spans from -55°C to 175°C.

Diode Arrays Feature Summary

• Utilizes advanced third-generation silicon carbide technology for high efficiency and reliability.
• Exhibits zero reverse recovery charge, enabling high-speed switching performance.
• Demonstrates temperature-independent switching behavior across the operating range.
• Allows system miniaturization through reduced cooling requirements and lightweight design.

Diode Arrays Applications

• Industrial power supplies
• Industrial UPS systems
• Battery chargers
• Solar inverters
• Switch mode power supplies

Diode Arrays Procurement Notes

Verify the manufacturer designation as Hunan Sanan Semiconductor Co., Ltd. on official documentation. Confirm the specific suffix ISATH corresponds to the tube packing type containing 300 units per tube. Ensure technical specifications align with the provided datasheet Rev. 1.1.0 dated June 2023 before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and elevated temperature tolerance. The silicon carbide construction offers superior thermal conductivity compared to silicon-based solutions. Evaluate the thermal resistance characteristics and derating curves to ensure adequate heat dissipation within the specified junction temperature limits for the target environment.

Diode Arrays Part Context

This part belongs to the SDS065J series of silicon carbide Schottky barrier diodes. The series utilizes third-generation SiC technology to achieve higher efficiency and lower losses than traditional silicon alternatives. The TO-247-3L package provides robust mechanical mounting suitable for industrial power electronics applications requiring high current handling capabilities.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values when evaluating alternative components from other manufacturers for direct replacement scenarios.

Diode Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175°C.

Does this diode exhibit reverse recovery charge?

No, the silicon carbide Schottky structure ensures there is no reverse recovery charge.

What is the packaging format for the ISATH suffix?

The ISATH suffix indicates the device is packed in tubes, with a unit quantity of 300 per tube.