SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SDTC124EET1G is an NPN digital transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external biasing networks. It integrates a single NPN bipolar junction transistor with two monolithic resistors: a base series resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Internal resistance values are typically 22 kΩ for R1 and 22 kΩ for R2. It is housed in a surface-mount SC-75 (SOT-416) package with three leads and is qualified under the AEC-Q101 automotive standard.
Verify the specific suffix 'ET1G' against official onsemi documentation to confirm packaging configuration and compliance status. Ensure the component matches the required SC-75 footprint and pinout for the target design. Cross-reference the AEC-Q101 certification requirements with system-level automotive standards before finalizing procurement specifications.
Select this component when a compact NPN switching solution with integrated biasing is required for 50 V applications. Verify that the 100 mA collector current rating meets the load requirements. Confirm that the 22 kΩ internal resistor values provide appropriate input impedance for the driving logic levels used in the specific application circuit.
This part belongs to the DTC124 family of digital transistors from onsemi. It serves as a pre-biased alternative to discrete transistor-resistor combinations. The 'SDTC' prefix indicates it is a specific variant within the broader BRT portfolio, optimized for space-constrained designs requiring automotive-grade reliability.
Direct substitutes include the DTC124EET1G from onsemi, which shares identical electrical characteristics and pinout. Other manufacturers offer equivalent SOT-416 NPN BRTs with matching 22kΩ/22kΩ resistor ratios and 50V ratings; verify pin compatibility and thermal performance before substitution.