Single FETs, MOSFETs SFT1342-TL-E product image

SFT1342-TL-E

  • Description:MOSFET P-CH 60V 12A DPAK/TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:8c297fb9aaa2 Category: Brand:

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SFT1342-TL-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 12A DPAK/TP-FA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SFT1342-TL-E

  • Description:MOSFET P-CH 60V 12A DPAK/TP-FA
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:62mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta), 15W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK/TP-FA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SFT1342-TL-E

SFT1342-TL-E

Single FETs, MOSFETs Overview

The SFT1342-TL-E is a single P-Channel Power MOSFET manufactured by onsemi. It features a Drain-to-Source Voltage (V_DSS) of -60 V and supports a continuous DC Drain Current (I_D) of -12 A. The device exhibits a maximum static Drain-to-Source On-State Resistance (R_DS(on)) of 62 mΩ at V_GS = -10 V and -6 A. Key electrical parameters include a Gate Threshold Voltage (V_GS(th)) ranging from -1.2 V to -2.6 V, and a Total Gate Charge (Q_g) of 26 nC measured at V_DS = -30 V, V_GS = -10 V, and I_D = -12 A. Thermal performance includes a Junction-to-Ambient thermal resistance (R_θJA) of 125 °C/W when inserted mounted.

Single FETs, MOSFETs Feature Summary

  • Low On-Resistance for efficient power conduction
  • High Speed Switching capability with low gate charge
  • ESD Diode-Protected Gate structure

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management systems
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and shipping quantity. The TL suffix indicates the DPAK(TP-FA) package shipped in reels. Ensure compatibility with the required voltage and current ratings for the target application. Confirm RoHS compliance status if environmental regulations apply to the manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component based on the -60 V breakdown voltage and -12 A current handling requirements. Evaluate the R_DS(on) specifications against the desired conduction losses at the operating gate voltage. Consider the thermal resistance values to ensure adequate heat dissipation within the system's temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the SFT1342 series of P-Channel Power MOSFETs designed for general-purpose switching applications. The product line emphasizes efficiency through low on-resistance and fast switching characteristics. It is part of onsemi's portfolio of discrete power semiconductors aimed at optimizing system performance.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides or datasheets for verified equivalent parts. Cross-reference key parameters such as voltage rating, current capacity, and package dimensions before implementation.

Single FETs, MOSFETs FAQ

What is the maximum Drain-to-Source Voltage?

The maximum Drain-to-Source Voltage (V_DSS) is -60 V.

What is the typical Total Gate Charge?

The Total Gate Charge (Q_g) is typically 26 nC under standard test conditions.

SFT1342-TL-ESFT1342-TL-E

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