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SFT1342-TL-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 12A DPAK/TP-FA. Review the specifications below when checking this part for your BOM.
The SFT1342-TL-E is a single P-Channel Power MOSFET manufactured by onsemi. It features a Drain-to-Source Voltage (V_DSS) of -60 V and supports a continuous DC Drain Current (I_D) of -12 A. The device exhibits a maximum static Drain-to-Source On-State Resistance (R_DS(on)) of 62 mΩ at V_GS = -10 V and -6 A. Key electrical parameters include a Gate Threshold Voltage (V_GS(th)) ranging from -1.2 V to -2.6 V, and a Total Gate Charge (Q_g) of 26 nC measured at V_DS = -30 V, V_GS = -10 V, and I_D = -12 A. Thermal performance includes a Junction-to-Ambient thermal resistance (R_θJA) of 125 °C/W when inserted mounted.
Verify the specific ordering suffix to confirm the package type and shipping quantity. The TL suffix indicates the DPAK(TP-FA) package shipped in reels. Ensure compatibility with the required voltage and current ratings for the target application. Confirm RoHS compliance status if environmental regulations apply to the manufacturing process.
Select this component based on the -60 V breakdown voltage and -12 A current handling requirements. Evaluate the R_DS(on) specifications against the desired conduction losses at the operating gate voltage. Consider the thermal resistance values to ensure adequate heat dissipation within the system's temperature limits.
This component belongs to the SFT1342 series of P-Channel Power MOSFETs designed for general-purpose switching applications. The product line emphasizes efficiency through low on-resistance and fast switching characteristics. It is part of onsemi's portfolio of discrete power semiconductors aimed at optimizing system performance.
Consult official substitution guides or datasheets for verified equivalent parts. Cross-reference key parameters such as voltage rating, current capacity, and package dimensions before implementation.
The maximum Drain-to-Source Voltage (V_DSS) is -60 V.
The Total Gate Charge (Q_g) is typically 26 nC under standard test conditions.
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