SG2804J-883B

SG2804J-883B

  • Description:TRANS 8NPN DARL 50V 18CERDIP
  • Series:-

SKU:92b2d06710a4 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 8NPN DARL 50V 18CERDIP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Transistor Type:8 NPN Darlington
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:18-CDIP (0.300", 7.62mm)
  • Supplier Device Package:18-CERDIP
  • Grade:-
  • Qualification:-

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SG2804J-883B

Overview

The SG2804J-883B is a medium current transistor array manufactured by Microchip Technology. It features eight NPN Darlington pairs configured in a single package, designed for robust switching applications. The device supports collector currents up to 0.5 A and withstands collector-emitter voltages of 50 V. It is compatible with 6V to 15V CMOS and PMOS logic levels, ensuring seamless integration with standard digital control circuits. The component utilizes a ceramic dual in-line package (CDIP) suitable for military-grade environments.

Feature Summary

  • Eight integrated NPN Darlington pairs provide high current gain within a compact footprint
  • Logic level compatibility with 6V to 15V CMOS and PMOS drivers simplifies interface design
  • Military-grade construction ensures reliability under extreme temperature conditions

Applications

  • High-current relay driving systems
  • Industrial motor control interfaces
  • Power supply switching circuits

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with MIL-STD requirements. Ensure the supplier provides traceable origin data consistent with Microchip Technology specifications. Cross-reference the part number against official datasheets to validate pinout configuration and electrical ratings before procurement.

Selection Notes

Select this component when high current switching capability is required from a single IC package. The Darlington configuration offers significant current amplification, reducing the load on upstream logic drivers. Consider the thermal dissipation characteristics of the ceramic DIP package for high-duty cycle applications requiring sustained operation at maximum ratings.

Part Context

This part belongs to the SG series of bipolar transistor arrays, specifically engineered for demanding industrial and military applications. The inclusion of the 883B suffix indicates adherence to strict quality standards for space and defense sectors. It serves as a critical interface between low-power control logic and high-power loads.

Replacement Considerations

Consult official Microchip Technology substitution guides for verified equivalents. Generic replacements may not match the specific voltage tolerances or logic compatibility ranges required for reliable system operation.

SG2804J-883BSG2804J-883B

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