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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SGB15N60HSATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Fast IGBT NPT technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 31 A at 25°C. Key electrical parameters include a gate-emitter voltage range of -20 V to +20 V, a saturation voltage of 1.8 V, and a total power dissipation of 175 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes NPT (Non-Punch-Through) technology for robust performance
- Designed for high-speed switching applications
- Single configuration suitable for compact circuit designs
Applications
- Switch-mode power supplies
- Motor control systems
- High-frequency inverters
Procurement Notes
Verify the specific suffix HSATMA1 against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet or material content declaration. Ensure the component meets all environmental operating limits defined in the technical data before integration into final assemblies.
Selection Notes
Select this component when a 600V rated IGBT with a TO-263-3 footprint is required. The 31A continuous current rating supports moderate power levels. Verify that the thermal management solution can handle the specified 175W power dissipation. Compare the 1.8V saturation voltage against alternative devices to ensure optimal conduction loss performance for the target application efficiency.
Part Context
This part belongs to Infineon's discrete IGBT portfolio, specifically utilizing NPT technology. It serves as a semiconductor switch for power electronics. The D263-3 package facilitates surface-mount assembly, distinguishing it from through-hole alternatives like TO-220. It is distinct from MOSFETs and other transistor types due to its bipolar conduction characteristics.
Replacement Considerations
Direct substitutes must match the 600V/31A rating and TO-263-3 package. Check for equivalent NPT technology IGBTs from Infineon or other manufacturers. Verify pinout compatibility and thermal resistance values. Cross-reference datasheets for switching times and saturation voltages to ensure circuit performance remains unchanged.
